Datasheet > SST26VF064BAT-104-5I-SO

SST26VF064BAT-104-5I-SO

更新时间： 2024-09-18 12:01:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
76页	1135K
描述
3.0V Serial Quad I/O (SQI) Flash Memory

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SST26VF064B / SST26VF064BA

3.0V Serial Quad I/O (SQI) Flash Memory

• Temperature Range

Features

- Industrial: -40°C to +85°C

• Single Voltage Read and Write Operations

- 2.7-3.6V

• Packages Available

- 8-contact WSON (6mm x 5mm)

- 8-lead SOIC (200 mil)

- 16-lead SOIC (300 mil)

• Serial Interface Architecture

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- 24-ball TBGA (6mm x 8mm)

- Mode 0 and Mode 3

• All devices are RoHS compliant

- x1/x2/x4 Serial Peripheral Interface (SPI) Proto-

col

Product Description

• High Speed Clock Frequency

- 104 MHz max

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF064B/064BA also

support full command-set compatibility to traditional

Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board

space and ultimately lower system costs.

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and man-

ufacturability compared with alternate approaches.

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

The SST26VF064B/064BA significantly improve per-

formance and reliability, while lowering power con-

sumption. These devices write (Program or Erase) with

a single power supply of 2.7-3.6V. The total energy

consumed is a function of the applied voltage, current,

and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to

program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is

less than alternative flash memory technologies.

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

SST26VF064B/064BA are offered in 8-contact WSON

(6 mm x 5 mm), 8-lead SOIC (200 mil), 16-lead SOIC

(300 mil), and 24-ball TBGA. See Figure 2-2 for pin

assignments.

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

- Individual Block-Locking

Two configurations are available upon order:

SST26VF064B default at power-up has the WP# and

Hold# pins enabled and SST26VF064BA default at

power-up has the WP# and Hold# pins disabled.

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

• Security ID

- One-Time Programmable (OTP) 2 KByte,

Secure ID

- 64 bit unique, factory pre-programmed

identifier

- User-programmable area

 2013 Microchip Technology Inc.

Advance Information

DS25119C-page 1

12 3 4 5 6 7...76

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与SST26VF064BAT-104-5I-SO相关器件

型号	品牌	获取价格	描述	数据表
SST26VF064BAT-104-5I-TD	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BAT-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BAT-104I/SM	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BAT-104I/SO	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BEUI	MICROCHIP	获取价格	64 Mbit Serial Quad I/O (SQI) Flash Memory wi
SST26VF064BEUI-104I/MF	MICROCHIP	获取价格	FLASH 3V PROM
SST26VF064BEUI-104I/SM	MICROCHIP	获取价格	FLASH 3V PROM
SST26VF064BEUIT-104I/MF	MICROCHIP	获取价格	FLASH 3V PROM
SST26VF064BEUIT-104I/SM	MICROCHIP	获取价格	FLASH 3V PROM
SST26VF064BEUIT-104IMF	MICROCHIP	获取价格	64 Mbit Serial Quad I/O (SQI) Flash Memory wi

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