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SST26VF064BT-104I/TD PDF预览

SST26VF064BT-104I/TD

更新时间： 2024-09-19 00:41:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 时钟内存集成电路
页数 文件大小 规格书
85页 3119K
描述
2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

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中文翻译

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SST26VF064BT-104I/TD 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TBGA,Reach Compliance Code：compliant
Factory Lead Time：8 weeks风险等级：5.71
Samacsys Description：NOR Flash 64Mb 2.7-3.6V SQI Flash Memory启动块：BOTTOM/TOP
最大时钟频率 (fCLK)：104 MHzJESD-30 代码：R-PBGA-B24
JESD-609代码：e1长度：8 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：1湿度敏感等级：3
功能数量：1端子数量：24
字数：67108864 words字数代码：64000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：64MX1
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
编程电压：3 V筛选级别：TS 16949
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：6 mm
Base Number Matches：1

SST26VF064BT-104I/TD 数据手册

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SST26VF064B / SST26VF064BA  
2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory  
• Security ID  
Features  
- One-Time Programmable (OTP) 2 KByte, Secure ID  
- 64 bit unique, factory pre-programmed identifier  
- User-programmable area  
• Single Voltage Read and Write Operations  
- 2.7-3.6V or 2.3-3.6V  
• Serial Interface Architecture  
• Temperature Range  
- Nibble-wide multiplexed I/O’s with SPI-like serial  
command structure  
- Industrial: -40°C to +85°C  
- Extended: -40°C to +105°C  
- Mode 0 and Mode 3  
• Packages Available  
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol  
• High Speed Clock Frequency  
- 8-contact WDFN (6mm x 5mm)  
- 8-contact WDFN (6mm x 8 mm)  
- 8-lead SOIJ (5.28 mm)  
- 16-lead SOIC (7.50 mm)  
- 24-ball TBGA (6mm x 8mm)  
- 2.7-3.6V: 104 MHz max  
- 2.3-3.6V: 80 MHz max  
• Burst Modes  
- Continuous linear burst  
- 8/16/32/64 Byte linear burst with wrap-around  
• All devices are RoHS compliant  
• Superior Reliability  
Product Description  
- Endurance: 100,000 Cycles (min)  
The Serial Quad I/O™ (SQI™) family of flash-memory  
devices features a six-wire, 4-bit I/O interface that  
allows for low-power, high-performance operation in a  
low pin-count package. SST26VF064B/064BA also  
support full command-set compatibility to traditional  
Serial Peripheral Interface (SPI) protocol. System  
designs using SQI flash devices occupy less board  
space and ultimately lower system costs.  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read current: 15 mA (typical @ 104 MHz)  
- Standby Current: 15 µA (typical)  
• Fast Erase Time  
- Sector/Block Erase: 18 ms (typ), 25ms (max)  
- Chip Erase: 35 ms (typ), 50 ms (max)  
• Page-Program  
All members of the 26 Series, SQI family are manufac-  
tured with proprietary, high-performance CMOS Super-  
Flash® technology. The split-gate cell design and thick-  
oxide tunneling injector attain better reliability and man-  
ufacturability compared with alternate approaches.  
- 256 Bytes per page in x1 or x4 mode  
• End-of-Write Detection  
- Software polling the BUSY bit in status register  
• Flexible Erase Capability  
SST26VF064B/064BA significantly improve perfor-  
mance and reliability, while lowering power consump-  
tion. These devices write (Program or Erase) with a  
single power supply of 2.3-3.6V. The total energy con-  
sumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range,  
the SuperFlash technology uses less current to pro-  
gram and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is  
less than alternative flash memory technologies.  
- Uniform 4 KByte sectors  
- Four 8 KByte top and bottom parameter  
overlay blocks  
- One 32 KByte top and bottom overlay block  
- Uniform 64 KByte overlay blocks  
• Write-Suspend  
- Suspend Program or Erase operation to access  
another block/sector  
• Software Reset (RST) mode  
• Software Protection  
SST26VF064B/064BA are offered in 8-contact WDFN  
(6 mm x 5 mm or 6mm x 8mm), 8-lead SOIJ (5.28 mm),  
16-lead SOIC (7.50 mm), and 24-ball TBGA. See Fig-  
ure 2-2 for pin assignments.  
- Individual-Block Write Protection with permanent  
lock-down capability  
- 64 KByte blocks, two 32 KByte blocks, and  
eight 8 KByte parameter blocks  
Two configurations are available upon order.  
SST26VF064B default at power-up has the WP# and  
HOLD# pins enabled, and the SIO2 and SIO3 pins dis-  
- Read Protection on top and bottom 8 KByte  
parameter blocks  
abled,  
to  
initiate  
SPI-protocol  
operations.  
2015 Microchip Technology Inc.  
DS20005119G-page 1  
1234567...85

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