Datasheet > SST26VF080A

SST26VF080A

更新时间： 2024-11-08 02:48:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
72页	792K
描述
2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢) Flash Memory

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SST26VF080A 数据手册

SST26VF080A

2.5V/3.0V 8-Mbit Serial Quad I/O™ (SQI™) Flash Memory

• Security ID:

Features

- One-Time-Programmable (OTP) 2-Kbyte

• Single Voltage Read and Write Operations:

Secure ID:

- 2.7V-3.6V or 2.3V-3.6V

- 128-bit unique, factory preprogrammed

identifier

• Serial Interface Architecture:

- Nibble-wide multiplexed I/O’s with SPI-like

- User-programmable area

serial command structure:

• Temperature Range:

- Mode 0 and Mode 3

- Industrial: -40°C to +85°C

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

- Extended: -40°C to +125°C

• High-Speed Clock Frequency:

• Automotive AEC-Q100 Qualified

- 2.7V-3.6V: 104 MHz maximum (Industrial)

• Packages Available:

- 2.3V-3.6V: 80 MHz maximum (Industrial and

- 8-contact WDFN (6 mm x 5 mm)

Extended)

- 8-lead SOIC (3.90 mm)

• Burst Modes:

• All Devices are RoHS Compliant

- Continuous linear burst

- 8/16/32/64-byte linear burst with wrap-around

Product Description

• Superior Reliability:

The Serial Quad I/O™ (SQI™) family of Flash memory

- Endurance: 100,000 cycles (minimum)

devices features a six-wire, 4-bit I/O interface that

- Greater than 100 years data retention

allows for low-power, high-performance operation in a

• Low-Power Consumption:

low pin count package. SST26VF080A also supports

- Active Read current: 15 mA (typical @

104 MHz)

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI Flash devices occupy less board space and

ultimately lower system costs.

- Standby Current: 15 µA (typical)

• Fast Erase Time:

- Sector/Block Erase: 20 ms (typical), 25 ms

(maximum)

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash^®technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

- Chip Erase: 40 ms (typical), 50 ms

(maximum)

• Page-Program:

SST26VF080A significantly improves performance and

reliability, while lowering power consumption. These

devices write (Program or Erase) with a single-power

supply of 2.3V-3.6V. The total energy consumed is a

function of the applied voltage, current and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy

consumed during any erase or program operation is

less than alternative Flash memory technologies.

- 256 bytes per page in x1 or x4 mode

• End-of-Write Detection:

- Software polling the BUSY bit in STATUS

• Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Uniform 32-Kbyte overlay blocks

- Uniform 64-Kbyte overlay blocks

• Write-Suspend:

See Figure 2-1 for pin assignments.

- Suspend program or erase operation to

access another block/sector

• Software Reset (RST) mode

• Software Write Protection:

- Write protection through Block Protection bits

in STATUS register

 2019-2021 Microchip Technology Inc.

DS20006203C-page 1

12 3 4 5 6 7...72

中文翻译

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与SST26VF080A相关器件

型号	品牌	获取价格	描述	数据表
SST26VF080A-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)
SST26VF080A-104I/SN	MICROCHIP	获取价格	Flash
SST26VF080A-80E/MF	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)
SST26VF080A-80E/MF70SVAO	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)
SST26VF080A-80E/SN	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)
SST26VF080A-80E/SN70SVAO	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)
SST26VF080AT-104I/MF	MICROCHIP	获取价格	Flash
SST26VF080AT-104I/SN	MICROCHIP	获取价格	Flash
SST26VF080AT-80E/MF	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)
SST26VF080AT-80E/MF70SVAO	MICROCHIP	获取价格	2.5V/3.0V 8-Mbit Serial Quad I/Oâ¢ (SQIâ¢)

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