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SST26VF064BEUIT-104IMF PDF预览

SST26VF064BEUIT-104IMF

更新时间: 2024-11-08 02:52:47
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美国微芯 - MICROCHIP /
页数 文件大小 规格书
81页 950K
描述
64 Mbit Serial Quad I/O (SQI) Flash Memory with EUI-48™ and EUI-64™ Identifier

SST26VF064BEUIT-104IMF 数据手册

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SST26VF064BEUI  
64 Mbit Serial Quad I/O (SQI) Flash Memory with EUI-48™  
and EUI-64™ Identifier  
lock-down capability  
Features  
- 64 KByte blocks, two 32 KByte blocks, and  
eight 8 KByte parameter blocks  
• Factory-Programmed with EUI-48 and EUI-64  
Globally Unique Identifier  
- Read Protection on top and bottom 8 KByte  
- Secure, read-only access in Serial Flash  
parameter blocks  
Discoverable Parameter (SFDP) table  
• Security ID  
• Single Voltage Read and Write Operations  
- One-Time Programmable (OTP) 2 KByte, Secure ID  
- 2.7-3.6V or 2.3-3.6V  
- 64 bit unique, factory pre-programmed identifier  
• Serial Interface Architecture  
- User-programmable area  
- Nibble-wide multiplexed I/O’s with SPI-like serial  
command structure  
Temperature Range  
- Industrial: -40°C to +85°C  
- Mode 0 and Mode 3  
• Automotive AECQ-100 Grade 2 and Grade 3  
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol  
• Packages Available  
• High Speed Clock Frequency  
- 8-contact WDFN (6mm x 5mm)  
- 2.7-3.6V: 104 MHz max  
- 8-lead SOIJ (5.28 mm)  
- 2.3-3.6V: 80 MHz max  
• All devices are RoHS compliant  
• Burst Modes  
- Continuous linear burst  
- 8/16/32/64 Byte linear burst with wrap-around  
Product Description  
• Superior Reliability  
The Serial Quad I/O™ (SQI™) family of flash-memory  
devices features a six-wire, 4-bit I/O interface that  
allows for low-power, high-performance operation in a  
low pin-count package. SST26VF064BEUI also sup-  
port full command-set compatibility to traditional Serial  
Peripheral Interface (SPI) protocol. System designs  
using SQI flash devices occupy less board space and  
ultimately lower system costs.  
- Endurance: 100,000 Cycles (min)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read current: 15 mA (typical @ 104 MHz)  
- Standby Current: 15 µA (typical)  
• Fast Erase Time  
- Sector/Block Erase: 18 ms (typ), 25ms (max)  
- Chip Erase: 35 ms (typ), 50 ms (max)  
All members of the 26 Series, SQI family are manufac-  
tured with proprietary, high-performance CMOS Super-  
Flash® technology. The split-gate cell design and thick-  
oxide tunneling injector attain better reliability and man-  
ufacturability compared with alternate approaches.  
• Page-Program  
- 256 Bytes per page in x1 or x4 mode  
• End-of-Write Detection  
- Software polling the BUSY bit in status register  
• Flexible Erase Capability  
SST26VF064BEUI significantly improve performance  
and reliability, while lowering power consumption.  
These devices write (Program or Erase) with a single  
power supply of 2.3-3.6V. The total energy consumed  
is a function of the applied voltage, current, and time of  
application. Since for any given voltage range, the  
SuperFlash technology uses less current to program  
and has a shorter erase time, the total energy con-  
sumed during any Erase or Program operation is less  
than alternative flash memory technologies.  
- Uniform 4 KByte sectors  
- Four 8 KByte top and bottom parameter  
overlay blocks  
- One 32 KByte top and bottom overlay block  
- Uniform 64 KByte overlay blocks  
• Write-Suspend  
- Suspend Program or Erase operation to access  
another block/sector  
SST26VF064BEUI are offered in 8-contact WDFN  
(6 mm x 5 mm) and 8-lead SOIJ (5.28 mm). See  
Figure 2-1 and Figure 2-2 for pin assignments.  
• Software Reset (RST) mode  
• Software Protection  
- Individual-Block Write Protection with permanent  
2015-2018 Microchip Technology Inc.  
DS20006138A-page 1  

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