SST26VF064BEUI
64 Mbit Serial Quad I/O (SQI) Flash Memory with EUI-48™
and EUI-64™ Identifier
lock-down capability
Features
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
• Factory-Programmed with EUI-48 and EUI-64
Globally Unique Identifier
- Read Protection on top and bottom 8 KByte
- Secure, read-only access in Serial Flash
parameter blocks
Discoverable Parameter (SFDP) table
• Security ID
• Single Voltage Read and Write Operations
- One-Time Programmable (OTP) 2 KByte, Secure ID
- 2.7-3.6V or 2.3-3.6V
- 64 bit unique, factory pre-programmed identifier
• Serial Interface Architecture
- User-programmable area
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
• Temperature Range
- Industrial: -40°C to +85°C
- Mode 0 and Mode 3
• Automotive AECQ-100 Grade 2 and Grade 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• Packages Available
• High Speed Clock Frequency
- 8-contact WDFN (6mm x 5mm)
- 2.7-3.6V: 104 MHz max
- 8-lead SOIJ (5.28 mm)
- 2.3-3.6V: 80 MHz max
• All devices are RoHS compliant
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
Product Description
• Superior Reliability
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26VF064BEUI also sup-
port full command-set compatibility to traditional Serial
Peripheral Interface (SPI) protocol. System designs
using SQI flash devices occupy less board space and
ultimately lower system costs.
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby Current: 15 µA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
All members of the 26 Series, SQI family are manufac-
tured with proprietary, high-performance CMOS Super-
Flash® technology. The split-gate cell design and thick-
oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches.
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
SST26VF064BEUI significantly improve performance
and reliability, while lowering power consumption.
These devices write (Program or Erase) with a single
power supply of 2.3-3.6V. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less
than alternative flash memory technologies.
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter
overlay blocks
- One 32 KByte top and bottom overlay block
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
SST26VF064BEUI are offered in 8-contact WDFN
(6 mm x 5 mm) and 8-lead SOIJ (5.28 mm). See
Figure 2-1 and Figure 2-2 for pin assignments.
• Software Reset (RST) mode
• Software Protection
- Individual-Block Write Protection with permanent
2015-2018 Microchip Technology Inc.
DS20006138A-page 1