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SSP3N90A

更新时间: 2024-09-16 02:59:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管脉冲局域网
页数 文件大小 规格书
7页 260K
描述
Advanced Power MOSFET

SSP3N90A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.32雪崩能效等级(Eas):286 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:6.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSP3N90A 数据手册

 浏览型号SSP3N90A的Datasheet PDF文件第2页浏览型号SSP3N90A的Datasheet PDF文件第3页浏览型号SSP3N90A的Datasheet PDF文件第4页浏览型号SSP3N90A的Datasheet PDF文件第5页浏览型号SSP3N90A的Datasheet PDF文件第6页浏览型号SSP3N90A的Datasheet PDF文件第7页 
SSP3N90A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 900 V  
RDS(on) = 6.2 W  
ID = 3 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : 25 mA (Max.) @ VDS = 900V  
Low RDS(ON) : 4.679 W (Typ.)  
TO-220  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
900  
3
Units  
VDSS  
V
O
Continuous Drain Current (TC=25 C)  
Continuous Drain Current (TC=100 OC)  
Drain Current-Pulsed  
ID  
A
1.9  
12  
1
IDM  
VGS  
EAS  
IAR  
A
V
O
+
_
Gate-to-Source Voltage  
30  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
286  
3
mJ  
A
O
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
1
mJ  
V/ns  
W
10  
O
3
1.5  
100  
0.8  
O
O
Total Power Dissipation (TC=25 C)  
PD  
TJ , TSTG  
TL  
W/ OC  
Linear Derating Factor  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
OC  
Purposes, 1/8“ from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
1.25  
--  
Units  
R q  
--  
0.5  
--  
JC  
OC /W  
R q  
CS  
R q  
Junction-to-Ambient  
62.5  
JA  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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