SSP45N20B

更新时间： 2024-09-15 22:21:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	915K
描述
200V N-Channel MOSFET

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中文翻译

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数据手册

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SSP45N20B 数据手册

November 2001

SSP45N20B/SSS45N20B

200V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

•

35A, 200V, R

= 0.065Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 133 nC)

Low Crss ( typical 120 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

SSP Series

TO-220F

SSS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

SSP45N20B

SSS45N20B

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

35 *

22.2 *

140 *

- Continuous (T = 100°C)

22.2

140

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

650

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

17.6

5.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

176

- Derate above 25°C

Operating and Storage Temperature Range

1.41

0.45

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

SSP45N20B

0.71

SSS45N20B

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

2.2

θJC

0.5

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

Rev. A, November 2001

12 3 4 5 6 7...10

中文翻译

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与SSP45N20B相关器件

型号	品牌	获取价格	描述	数据表
SSP45N20B_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
SSP4N55	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 550V V(BR)DSS \| 4A I(D) \| TO-220VAR
SSP4N55A	SAMSUNG	获取价格	Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
SSP4N60	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 4A I(D) \| TO-220VAR
SSP4N60A	SAMSUNG	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
SSP4N60AS	FAIRCHILD	获取价格	Advanced Power MOSFET
SSP4N60AS	SAMSUNG	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
SSP4N60ASJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
SSP4N60B	FAIRCHILD	获取价格	600V N-Channel MOSFET
SSP4N60BJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal

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