Datasheet > SSM6N03FE_07

SSM6N03FE_07

更新时间： 2024-09-25 03:50:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	147K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM6N03FE_07 数据手册

SSM6N03FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N03FE

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

Input impedance is high. Driving current is extremely low.

Can be directly driven by a CMOS device even at low voltage due to

low gate threshold voltage.

•

High-speed switching.

Housed in a ultra-small package which is suitable for high density

mounting.

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

Drain current

GSS

100

°C

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

150

JEDEC

JEITA

―

stg

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

Weight:

2-2N1D

g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)

0.3 mm

Equivalent Circuit (top view)

Marking

6 PIN

5 PIN

4 PIN

6 PIN

5 PIN

4 PIN

D A

1 PIN

2 PIN

3 PIN

1 PIN

2 PIN

3 PIN

2007-11-01

12 3 4 5

中文翻译

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