SSM2301N

更新时间： 2024-11-03 06:14:23

品牌	Logo	应用领域
SSC		晶体晶体管
页数	文件大小	规格书
6页	150K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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中文翻译

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技术参数
数据手册

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SSM2301N 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	湿度敏感等级：	1
Base Number Matches：	1

SSM2301N 数据手册

SSM2301N

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Small package outline

Surface-mount device

BV _DSS

R_DS(ON)

I_D

-20V

130mΩ

-2.3A

SOT-23

Description

Power MOSFETs from Silicon Standard Corp. provide the

designer with the best combination of fast switching, low

on-resistance and cost-effectiveness.

The SOT-23 package is widely preferred for commercial and

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 20

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

-2.3

-1.5

-10

P_D@ T_A=25°C

Total Power Dissipation

1.25

Linear Derating Factor

0.01

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

100

Unit

Rthj-amb

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.2.02 3/11/2004

www.SiliconStandard.com

1 of 6

12 3 4 5 6

中文翻译

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