SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
•
•
•
Complimentary to SS8550
Collector Current: I =1.5A
Collector Power Dissipation: P =2W (T =25°C)
C
C
C
TO-92
1. Emitter 2. Base 3. Collector
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
CBO
25
V
CEO
EBO
6
1.5
V
I
A
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
W
C
T
T
150
°C
°C
J
-65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
40
25
6
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =100µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =2mA, I =0
C B
I =100µA, I =0
V
E
C
I
I
V
=35V, I =0
100
100
nA
nA
CBO
EBO
CB
EB
E
Emitter Cut-off Current
V
=6V, I =0
C
h
h
h
DC Current Gain
V
V
V
=1V, I =5mA
45
85
40
135
160
110
FE1
FE2
FE3
CE
CE
CE
C
=1V, I =100mA
300
C
=1V, I =800mA
C
V
V
V
(sat)
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I =800mA, I =80mA
0.28
0.98
0.66
9.0
0.5
1.2
1
V
V
CE
BE
BE
C
B
I =800mA, I =80mA
C
B
V
=1V, I =10mA
V
CE
C
C
Output Capacitance
V
=10V, I =0
pF
ob
CB
E
f=1MHz
f
Current Gain Bandwidth Product
V
=10V, I =50mA
100
190
MHz
T
CE
C
h
Classification
FE
Classification
B
C
D
h
85 ~ 160
120 ~ 200
160 ~ 300
FE2
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002