Datasheet > 晶体管 > 小信号双极晶体管> SS8050-D-AP-HF

SS8050-D-AP-HF

更新时间： 2024-01-17 13:18:41

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管放大器
页数	文件大小	规格书
2页	207K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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SS8050-D-AP-HF 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	25
Collector Current - Continuous：	1.5	DC current gain - Min：	120
DC current gain - Max：	400	Transition frequency：	100
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

SS8050-D-AP-HF 数据手册

M C C

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20736 Marilla Street Chatsworth

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SS8050-C

SS8050-D

Micro Commercial Components

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 1.0Watts(Tamb=25^OC) of Power Dissipation.

NPN Silicon

Transistors

Collector-current 1.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55^OC to +150^OC

•

Marking : SS8050

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

•

TO-92

Electrical Characteristics @ 25^OC Unless^EOtherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

(V_CB=40Vdc, I =0)

I_CEO

Collector Cutoff Current

(V_CE=20Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h_FE(1)

DC Current Gain

120

---

300

---

(I =100mAdc, V_CE=1.0Vdc)

h_FE(2)

DC Current Gain

(I =800mAdc, V_CE=1.0Vdc)

V_CE(sat)

V_BE(sat)

V_EB

Collector-Emitter Saturation Voltage

(I =800mAdc, I =80mAdc)

0.5

1.2

1.6

Vdc

Base-Emitter Saturation Voltage

(I =800mAdc, I =80mAdc)

---

DIMENSIONS

Base- Emitter Voltage

---

INCHES

MIN

.170

.550

.010

.130

.096

MIN

(I =1.5Adc)

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

SMALL-SIGNAL CHARACTERISTICS

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

f_T

Transistor Frequency

(I =50mAdc, V_CE=10Vdc, f=30MHz)

190

---

MHz

CLASSIFICATION OF H^{FE (1)}

Rank

Range

120-200

160-300

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

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