Datasheet > SS8050HPLT1G

SS8050HPLT1G

更新时间： 2022-05-14 22:20:08

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
3页	803K
描述
General Purpose Transistors NPN Silicon

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SS8050HPLT1G 数据手册

SS8050

General Purpose Transistors

NPN Silicon

Dimensions SOT-23

FEATURE

ƽHigh current capacity in compact package.

I_C=1.5 A.

ƽEpitaxial planar type.

ƽNPN complement: L8050H

Pb-Free Package is available.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Pin Configuration

DEVICE MARKING AND ORDERING INFORMATION

Shipping

Device

Marking

COLLECTOR

SS8050HPLT1G

S-SS8050HPLT1G

3000/Tape&Reel

1HA

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

SS8050HPLT3G

SS8050HQLT1G

SS8050HQLT3G

S-SS8050HPLT3G

S-SS8050HQLT1G

S-SS8050HQLT3G

BASE

1HC

EMITTER

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

SS8050HRLT1G

S-SS8050HRLT1G

1HE

1HG

SS8050HRLT3G

SS8050HSLT1G

SS8050HSLT3G

S-SS8050HRLT3G

S-SS8050HSLT1G

S-SS8050HSLT3G

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_CBO

V_EBO

1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

1. FR–5 = 1.0 x 0.75 x 0.062 in.

Rθ^{J A}

417

°C/W

°C

-55 to +150

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

01.06.2015

Rev :

1/3

www.leiditech.com

12 3

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