Datasheet > SS8050DJ18Z

SS8050DJ18Z

更新时间： 2024-01-22 10:57:22

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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3页	76K
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SS8050DJ18Z 数据手册

SS8050

NPN EPITAXIAL SILICON TRANSISTOR

2W OUTPUT AMPLIFIER OF PORTABLE

RADIOS IN CLASS

TO-92

B PUSH-PULL OPERATION.

· Complimentary to SS8550

· Collector Current: I_C=1.5A

· Collector Dissipation: P_C=2W (T_C=25°C)

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

1.5

V_CEO

V_EBO

I_C

Collector Dissipation

Junction Temperature

Storage Temperature

P_C

T_J

T_STG

150

-65 ~ 150

°C

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_C=100mA, I_E=0

I_C=2mA, I_B=0

I_E=100mA, I_C=0

V_CB=35V, I_E=0

V_EB=6V, I_C=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BV_CBO

BV_CEO

BV_EBO

I_CBO

100

Emitter Cut-off Current

I_EBO

V_CE=1V, I_C=5mA

V_CE=1V, I_C=100mA

V_CE=1V, I_C=800mA

I_C=800mA, I_B=80mA

V_CE=1V, I_C=10mA

V_CB=10V, I_E=0

h_FE1

h_FE2

DC Current Gain

135

160

110

0.28

0.98

0.66

9.0

300

h_FE3

0.5

1.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(sat)

V_BE(sat)

V_BE

Output Capacitance

C_OB

f=1MHz

V_CE=10V, I_C=50mA

100

MHz

Current Gain-Bandwidth Product

190

f_T

h_FE(2) CLASSIFICATION

Classification

h_FE(2)

85-160

120-200

160-300

Rev. B

ã 1999 Fairchild Semiconductor Corporation

12 3

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