Datasheet > SS8050L(SOT-23)

SS8050L(SOT-23)

更新时间： 2024-01-15 23:28:12

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江苏长电/长晶 - CJ		/
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描述
Transistor

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技术参数
数据手册

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SS8050L(SOT-23) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

SS8050L(SOT-23) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

SS8050

TRANSISTOR (NPN)

1. BASE

FEATURES

2. EMITTER

Complimentary to SS8550

3. COLLECTOR

MARKING: Y1

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

1.5

P_C

0.3

℃

T_j

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 100μA, I_E=0

I_C= 0.1mA, I_B=0

I_E=100μA, I_C=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB=40V, I_E=0

0.1

400

μA

Collector cut-off current

I_CEO

V_CB=20V, I_E=0

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

h_FE(1)

V_CE=1V, I_C= 100mA

V_CE=1V, I_C= 800mA

I_C=800mA, I_B= 80mA

120

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.5

1.2

_CE=10V, I_C= 50mA

Transition frequency

f_T

100

MHz

f=30MHz

CLASSIFICATION OF hFE

(1)

Rank

120-200

200-350

300-400

Range

A,Apr,2011

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