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SS8050-G PDF预览

SS8050-G

更新时间: 2024-02-26 15:38:42
品牌 Logo 应用领域
上华 - COMCHIP 光电二极管晶体管
页数 文件大小 规格书
5页 135K
描述
NPN TRANSISTOR 1.5A 40V SOT-23 R

SS8050-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.7
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

SS8050-G 数据手册

 浏览型号SS8050-G的Datasheet PDF文件第2页浏览型号SS8050-G的Datasheet PDF文件第3页浏览型号SS8050-G的Datasheet PDF文件第4页浏览型号SS8050-G的Datasheet PDF文件第5页 
General Purpose Transistor  
SS8050-G (NPN)  
RoHS Device  
Diagram:  
SOT-23  
Collector  
3
1 : BASE  
2 : EMITTER  
3 : COLLECTOR  
0.118(3.00)  
0.110(2.80)  
1
Base  
3
0.055(1.40)  
0.047(1.20)  
2
Emitter  
1
2
0.079(2.00)  
0.071(1.80)  
0.006(0.15)  
0.003(0.08)  
Maximum Ratings (at TA=25°C unless otherwise noted)  
0.041(1.05)  
0.035(0.90)  
0.100(2.55)  
0.089(2.25)  
Symbol  
Parameter  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
40  
V
0.004(0.10) max  
25  
V
0.020(0.50)  
0.012(0.30)  
0.020(0.50)  
0.012(0.30)  
5
V
Collector current  
1.5  
300  
A
Collector power dissipation  
Dimensions in inches and (millimeter)  
PC  
mW  
Thermal resistance from  
junction to ambient  
RθJA  
417  
°C/W  
Junction temperature  
Storage temperature  
TJ  
150  
°C  
°C  
Tstg  
-55~+150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Typ  
Parameter  
Conditions  
Min  
40  
25  
5
Max  
-
Unit  
V
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
IC =100μA , IE=0  
-
-
-
-
-
-
-
-
-
-
-
IC =0.1mA , IB=0  
-
V
IE =100μA , IC=0  
-
V
µA  
µA  
µA  
VCB=40V , IE=0  
ICBO  
ICEO  
-
0.1  
0.1  
0.1  
350  
-
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
VCE=20V , IE=0  
-
VEB=5V , IC=0  
IEBO  
-
VCE=1V , IC=100mA  
VCE=1V , IC=800mA  
IC=800mA , IB=80mA  
IC=800mA , IB=80mA  
VCE=10V, IC=50mA, f=30MHz  
hFE(1)  
200  
40  
-
DC current gain  
hFE(2)  
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
0.5  
1.2  
-
V
V
-
fT  
100  
MHZ  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: A  
Page 1  
QW-BTR56  
Comchip Technology CO., LTD.  

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