Datasheet > SS8050D-G

SS8050D-G

更新时间： 2024-02-10 15:30:11

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描述
Transistor

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技术参数
数据手册

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SS8050D-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

SS8050D-G 数据手册

SS8050

NPN General Purpose Transistors

TO-92

P b

Lead(Pb)-Free

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS(T =25˚C unless otherwise noted)

Rating

Symbol

Value

Unit

CBO

CEO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

EBO

Collector Current-Continuous

1.5

Total Device Dissipation T =25°C

°C

1.0

T ,T

Junction and Storage, Temperature

-55 to +150

stg

ELECTRICAL CHARACTERISTICS (T =25˚C unless otherwise noted)

Characteristics

Symbol

Unit

Max

Min

Typ

Collector-Base Breakdown Voltage

I =100µA, I =0

(BR)CBO

(BR)CEO

Collector-Emitter Breakdown Voltage

I =0.1mA, I =0

Emitter Base Breakdown Voltage

I =100µA, I =0

(BR)EBO

Collector cut-oﬀ current

=40V, I =0

µA

0.1

CBO

Emitter cut-oﬀ current

=20V, I =0

µA

CEO

EBO

Emitter cut-oﬀ current

0.1

=5V, I =0

WEITRON

http://www.weitron.com.tw

1/4

19-Jul-05

12 3 4

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