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SS1P4-E3/85A PDF预览

SS1P4-E3/85A

更新时间: 2024-11-05 21:14:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 84K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),

SS1P4-E3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
Base Number Matches:1

SS1P4-E3/85A 数据手册

 浏览型号SS1P4-E3/85A的Datasheet PDF文件第2页浏览型号SS1P4-E3/85A的Datasheet PDF文件第3页浏览型号SS1P4-E3/85A的Datasheet PDF文件第4页浏览型号SS1P4-E3/85A的Datasheet PDF文件第5页 
SS1P3, SS1P4  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface Mount  
Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMP® Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-220AA (SMP)  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
IF(AV)  
VRRM  
IFSM  
EAS  
1.0 A  
30 V, 40 V  
30 A  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
10 mJ  
VF  
0.40 V, 0.45 V  
150 °C  
Polarity: Color band denotes the cathode end  
TJ max.  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters and polarity protection  
applications.  
Note  
These devices are not AEC-Q101 qualified  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS1P3  
13  
SS1P4  
14  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
30  
40  
V
A
1.0  
30  
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
EAS  
10  
mJ  
dV/dt  
10 000  
V/μs  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Revision: 25-Jun-12  
Document Number: 88935  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SS1P4-E3/85A 替代型号

型号 品牌 替代类型 描述 数据表
SS1P4-E3/84A VISHAY

完全替代

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),

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