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SS1P6L-E3/85A PDF预览

SS1P6L-E3/85A

更新时间: 2024-11-06 06:13:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
4页 106K
描述
High-Current Density Surface Mount Schottky Barrier Rectifier

SS1P6L-E3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.52 V
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
最高工作温度:150 °C最大输出电流:1 A
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)Base Number Matches:1

SS1P6L-E3/85A 数据手册

 浏览型号SS1P6L-E3/85A的Datasheet PDF文件第2页浏览型号SS1P6L-E3/85A的Datasheet PDF文件第3页浏览型号SS1P6L-E3/85A的Datasheet PDF文件第4页 
New Product  
SS1P5L & SS1P6L  
Vishay General Semiconductor  
High-Current Density Surface Mount  
Schottky Barrier Rectifier  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
eSMPTM Series  
• Low forward voltage drop, low power  
losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
DO-220AA (SMP)  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1 A  
50 V, 60 V  
50 A  
MECHANICAL DATA  
VRRM  
IFSM  
Case: DO-220AA (SMP)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
EAS  
11.25 mJ  
0.43 V  
VF at IF = 1.0 A  
TJ max.  
150 °C  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS1P5L  
15L  
SS1P6L  
16L  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
50  
60  
V
A
1.0  
50  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Non-repetitive avalanche energy at IAS = 1.5 A, TA = 25 °C  
Operating junction and storage temperature range  
EAS  
11.25  
mJ  
°C  
TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
IF = 1.0 A TA = 25 °C  
0.52  
0.43  
0.59  
0.52  
Instantaneous forward voltage (1)  
VF  
V
IF = 1.0 A  
rated VR  
T
A = 125 °C  
TA = 25 °C  
-
100  
10  
µA  
mA  
Reverse current (2)  
IR  
TA = 125 °C  
1.6  
Typical junction capacitance  
4.0 V, 1 MHz  
CJ  
80  
-
pF  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
Document Number: 89063  
Revision: 26-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SS1P6L-E3/85A 替代型号

型号 品牌 替代类型 描述 数据表
SS1P6L-M3/85A VISHAY

完全替代

1A,60V,SM SCHOTTKY RECT.

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