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SS1P4L-HE3 PDF预览

SS1P4L-HE3

更新时间: 2024-11-05 14:44:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 353K
描述
Rectifier Diode, Schottky, 1 Element, 1.5A, 40V V(RRM),

SS1P4L-HE3 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.38 V
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
最高工作温度:150 °C最大输出电流:1.5 A
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)Base Number Matches:1

SS1P4L-HE3 数据手册

 浏览型号SS1P4L-HE3的Datasheet PDF文件第2页浏览型号SS1P4L-HE3的Datasheet PDF文件第3页浏览型号SS1P4L-HE3的Datasheet PDF文件第4页 
SS1P3L & SS1P4L  
Vishay General Semiconductor  
New Product  
Low VF Current Density Surface Mount  
Schottky Barrier Rectifiers  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
1 A  
30 V, 40 V  
50 A  
EAS  
11.25 mJ  
0.35 V, 0.38 V  
150 °C  
VF  
Tj max.  
DO-220AA (SMP)  
Features  
Mechanical Data  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
Case: DO-220AA (SMP)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes the cathode end  
Typical Applications  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
(TA = 25 °C unless otherwise specified)  
Parameter  
Symbol  
SS1P3L  
13L  
SS1P4L  
14L  
Unit  
Device marking code  
Maximum repetive peak reverse voltage  
VRRM  
IF(AV)  
30  
40  
V
A
Maximum average forward rectified current see Fig. 1  
TL = 140 °C  
TL = 135 °C  
1.0  
1.5  
Peak forward surge current 10 ms single half sine-wave superimposed on rated  
load  
IFSM  
50  
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C  
Voltage rate of change (rated VR)  
EAS  
11.25  
mJ  
V/µs  
°C  
dv/dt  
10000  
Operating junction and storage temperature range  
T
J, TSTG  
- 55 to + 150  
Document Number 88915  
14-Nov-05  
www.vishay.com  
1

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