Datasheet > SS1P4L-HE3/84A

SS1P4L-HE3/84A

更新时间： 2024-09-16 07:42:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	101K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 40V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

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SS1P4L-HE3/84A 数据手册

New Product

SS1P3L & SS1P4L

Vishay General Semiconductor

Low V High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

eSMP^TMSeries

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

DO-220AA (SMP)

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity

protection applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: DO-220AA (SMP)

Epoxy meets UL 94V-0 flammability rating

I_F(AV)

1 A

30 V, 40 V

50 A

V_RRM

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

E_AS

11.25 mJ

0.35 V, 0.38 V

150 °C

V_F

T_Jmax.

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS1P3L

13L

SS1P4L

14L

UNIT

Device marking code

Maximum repetive peak reverse voltage

V_RRM

I_F(AV)

T_L= 140 °C

T_L= 135 °C

1.0

1.5

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 10 ms single half sine-wave superimposed on

rated load

I_FSM

Non-repetitive avalanche energy at I_AS= 1.5 A, L = 10 mH, T_J= 25 °C

Voltage rate of change (rated V_R)

E_AS

11.25

V/µs

°C

dV/dt

_J,T_STG

10 000

Operating junction and storage temperature range

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

SS1P3L

SS1P4L

UNIT

I_F= 1.0 A

T_J= 25 °C

T_J= 125 °C

0.45

0.35

0.48

0.38

Maximum instantaneous forward voltage⁽¹⁾

V_F

T_J= 25 °C

T_J= 125 °C

200

150

µA

(2)

I_R

Maximum reverse current at rated V_R

C_J

Typical junction capacitance

4.0 V, 1 MHz

110

130

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Document Number: 88915

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与SS1P4L-HE3/84A相关器件

型号	品牌	获取价格	描述	数据表
SS1P4LHE3/85A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1.5A, 40V V(RRM),
SS1P4L-HE3/85A	VISHAY	获取价格	1.5A, 40V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
SS1P4LHM3/85A	VISHAY	获取价格	DIODE 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P4L-M3/84A	VISHAY	获取价格	DIODE 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P4L-M3/85A	VISHAY	获取价格	DIODE 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P5L	VISHAY	获取价格	High-Current Density Surface Mount Schottky Barrier Rectifier
SS1P5L_11	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P5L-E3/84A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM),
SS1P5L-E3/85A	VISHAY	获取价格	DIODE SCHOTTKY 50V 1A DO220AA
SS1P5LHE3/84A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM),

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