Datasheet > SS1P5L

SS1P5L

更新时间： 2024-09-15 06:13:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	106K
描述
High-Current Density Surface Mount Schottky Barrier Rectifier

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SS1P5L 数据手册

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SS1P5L & SS1P6L

Vishay General Semiconductor

High-Current Density Surface Mount

Schottky Barrier Rectifier

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

eSMP^TMSeries

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

DO-220AA (SMP)

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters and polarity

protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1 A

50 V, 60 V

50 A

MECHANICAL DATA

V_RRM

I_FSM

Case: DO-220AA (SMP)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

E_AS

11.25 mJ

0.43 V

V_Fat I_F= 1.0 A

T_Jmax.

150 °C

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS1P5L

15L

SS1P6L

16L

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

1.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Non-repetitive avalanche energy at I_AS= 1.5 A, T_A= 25 °C

Operating junction and storage temperature range

E_AS

11.25

°C

T_J,T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 1.0 A T_A= 25 °C

0.52

0.43

0.59

0.52

Instantaneous forward voltage ⁽¹⁾

V_F

I_F= 1.0 A

rated V_R

_A= 125 °C

T_A= 25 °C

100

µA

Reverse current ⁽²⁾

I_R

T_A= 125 °C

1.6

Typical junction capacitance

4.0 V, 1 MHz

C_J

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Document Number: 89063

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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