Datasheet > SQD50P04-13L

SQD50P04-13L

更新时间： 2024-11-18 12:51:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	799K
描述
Automotive P-Channel 40 V (D-S) 175 Â°C MOSFET

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SQD50P04-13L 数据手册

SQD50P04-13L

Automotive P-Channel

40 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V_DS(V)

- 40

0.013

0.022

- 50

FEATURES

_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

_D(A)

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• Package with Low Thermal Resistance

• 100 % R_gand UIS Tested

Configuration

Single

TO-252

• Compliant to RoHS Directive 2002/95/EC

• AEC-Q101 Qualified^d

Drain Connected to Tab

Top View

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-252

SQD50P04-13L-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

- 40

Gate-Source Voltage

V_GS

- 50

T_C= 25 °C^a

T_C= 125 °C

Continuous Drain Current

I_D

- 35

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

- 50

I_DM

I_AS

E_AS

- 200

- 39

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_C= 125 °C

Maximum Power Dissipation^b

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

1.8

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

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