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SQD50P06-15L PDF预览

SQD50P06-15L

更新时间: 2024-11-19 02:59:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
11页 234K
描述
Automotive P-Channel 60 V (D-S) 175 °C MOSFET

SQD50P06-15L 数据手册

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SQD25N15-52  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 150 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
• TrenchFET® power MOSFET  
• Package with low thermal resistance  
• 100 % Rg and UIS tested  
• AEC-Q101 qualified  
VDS (V)  
DS(on) () at VGS = 10 V  
D (A)  
150  
0.052  
25  
R
I
Configuration  
Package  
Single  
TO-252  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
TO-252  
D
Drain connected to tab  
G
S
N-Channel MOSFET  
S
D
G
Top View  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
150  
V
VGS  
20  
T
T
C = 25 °C  
25  
Continuous Drain Current  
ID  
C = 125 °C  
16  
Continuous Source Current (Diode Conduction) a  
Pulsed Drain Current b  
IS  
50  
A
IDM  
IAS  
63  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
30  
45  
L = 0.1 mH  
EAS  
mJ  
W
TC = 25 °C  
107  
Maximum Power Dissipation b  
PD  
TC = 125 °C  
35  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
50  
UNIT  
Junction-to-Ambient  
PCB Mount c  
°C/W  
Junction-to-Case (Drain)  
RthJC  
1.4  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR4 material).  
S15-2583-Rev. G, 02-Nov-15  
Document Number: 68604  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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