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SQD50P08-28 PDF预览

SQD50P08-28

更新时间: 2024-11-18 12:24:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
9页 847K
描述
Automotive P-Channel 80 V (D-S) 175 °C MOSFET

SQD50P08-28 数据手册

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SQD50P08-28  
Automotive P-Channel  
80 V (D-S) 175 °C MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedd  
PRODUCT SUMMARY  
VDS (V)  
- 80  
0.028  
- 48  
R
DS(on) () at VGS = - 10 V  
ID (A)  
Configuration  
Single  
• 100 % Rg and UIS Tested  
S
TO-252  
G
Drain Connected to Tab  
G
D
S
D
Top View  
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-252  
SQD50P08-28-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 80  
20  
UNIT  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
C = 25 °C  
- 48  
- 28  
- 50  
ID  
Continuous Drain Current  
T
C = 125 °C  
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
A
IDM  
IAS  
EAS  
- 190  
- 45  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
L = 0.1 mH  
100  
mJ  
W
TC = 25 °C  
136  
Maximum Power Dissipationb  
PD  
TC = 125 °C  
45  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
50  
UNIT  
PCB Mountc  
Junction-to-Ambient  
°C/W  
RthJC  
Junction-to-Case (Drain)  
1.1  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Parametric verification ongoing.  
www.freescale.net.cn  
1 / 9  

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