Datasheet > SQD50P08-25L

SQD50P08-25L

更新时间： 2024-11-18 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管脉冲
页数	文件大小	规格书
9页	839K
描述
Automotive P-Channel 80 V (D-S) 175 Â°C MOSFET

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SQD50P08-25L 数据手册

SQD50P08-25L

Automotive P-Channel

80 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^d

PRODUCT SUMMARY

V_DS(V)

- 80

0.025

0.031

- 50

_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

_D(A)

• 100 % R_gand UIS Tested

• Material categorization:

For definitions of compliance please see

www.freescale.net.cn

Configuration

Single

TO-252

Drain Connected to Tab

Top View

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-252

SQD50P08-25L-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 80

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C^a

_C= 125 °C

- 50

- 28

I_D

Continuous Drain Current

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

- 50

I_DM

I_AS

- 120

- 45

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

100

T_C= 25 °C

136

Maximum Power Dissipation^b

P_D

T_C= 125 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

PCB Mount^c

Junction-to-Ambient

°C/W

R_thJC

Junction-to-Case (Drain)

1.1

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

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