是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 20 weeks 1 day |
风险等级: | 7.91 | 雪崩能效等级(Eas): | 80 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 100 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SQD50P04-13L-GE3 | VISHAY |
获取价格 |
TRANSISTOR 50 A, 40 V, 0.017 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND R | |
SQD50P06-15L | FREESCALE |
获取价格 |
Automotive P-Channel 60 V (D-S) 175 °C MOSFE | |
SQD50P06-15L | VISHAY |
获取价格 |
Automotive P-Channel 60 V (D-S) 175 °C MOSFE | |
SQD50P06-15L_GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.0155ohm, 1-Element, P-Channel, Silicon, Me | |
SQD50P06-15L-GE3 | VISHAY |
获取价格 |
TRANSISTOR 50 A, 60 V, 0.0155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND | |
SQD50P08-25L | FREESCALE |
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Automotive P-Channel 80 V (D-S) 175 °C MOSFE | |
SQD50P08-25L | VISHAY |
获取价格 |
Automotive P-Channel 60 V (D-S) 175 °C MOSFE | |
SQD50P08-25L_GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Met | |
SQD50P08-28 | FREESCALE |
获取价格 |
Automotive P-Channel 80 V (D-S) 175 °C MOSFE | |
SQD50P08-28 | VISHAY |
获取价格 |
Automotive P-Channel 60 V (D-S) 175 °C MOSFE |