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SQD50P04-13L_GE3 PDF预览

SQD50P04-13L_GE3

更新时间: 2024-11-18 22:57:43
品牌 Logo 应用领域
威世 - VISHAY 脉冲晶体管
页数 文件大小 规格书
10页 165K
描述
MOSFET P-CH 40V 50A

SQD50P04-13L_GE3 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:20 weeks 1 day
风险等级:7.91雪崩能效等级(Eas):80 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.017 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SQD50P04-13L_GE3 数据手册

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SQD50P04-13L  
www.vishay.com  
Vishay Siliconix  
Automotive P-Channel 40 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
• TrenchFET® power MOSFET  
• Package with low thermal resistance  
• 100 % Rg and UIS tested  
• AEC-Q101 qualified d  
VDS (V)  
-40  
0.013  
0.022  
-50  
R
DS(on) () at VGS = -10 V  
DS(on) () at VGS = -4.5 V  
R
ID (A)  
• Material categorization:  
for definitions of compliance please see  
Configuration  
Single  
www.vishay.com/doc?99912  
TO-252  
S
Drain connected to tab  
G
P-Channel MOSFET  
D
S
D
G
Top View  
ORDERING INFORMATION  
Package  
TO-252  
Lead (Pb)-free and Halogen-free  
SQD50P04-13L-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
-40  
V
VGS  
20  
T
C = 25 °C a  
C = 125 °C  
-50  
Continuous Drain Current  
ID  
T
-39  
Continuous Source Current (Diode Conduction) a  
Pulsed Drain Current b  
IS  
-50  
A
IDM  
IAS  
-200  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
-40  
L = 0.1 mH  
TA = 25 °C  
EAS  
80  
mJ  
W
3
136  
Maximum Power Dissipation b  
T
C = 25 °C  
PD  
T
C = 125 °C  
45  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
50  
UNIT  
Junction-to-Ambient  
PCB Mount c  
°C/W  
Junction-to-Case (Drain)  
RthJC  
1.1  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR4 material).  
d. Parametric verification ongoing.  
S14-2536-Rev. D, 29-Dec-14  
Document Number: 65157  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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