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SQ4920EY-T1_GE3 PDF预览

SQ4920EY-T1_GE3

更新时间: 2024-11-30 20:06:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
11页 266K
描述
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SQ4920EY-T1_GE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:10 weeks
风险等级:1.71配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):105 pFJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SQ4920EY-T1_GE3 数据手册

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SQ4920EY  
Vishay Siliconix  
www.vishay.com  
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedd  
PRODUCT SUMMARY  
VDS (V)  
30  
0.0145  
0.0175  
8
RDS(on) () at VGS = 10 V  
RDS(on) () at VGS = 4.5 V  
• 100 % Rg and UIS Tested  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
ID (A) per leg  
Configuration  
Dual  
D
D
1
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
1
2
G
S
S
1
2
Top View  
N-Channel MOSFET  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ4920EY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
8
Continuous Drain Currenta  
ID  
TC = 125 °C  
7.2  
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
4
A
IDM  
IAS  
EAS  
32  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
25  
L = 0.1 mH  
TC = 25 °C  
31  
4.4  
mJ  
W
Maximum Power Dissipationb  
PD  
T
C = 125 °C  
1.4  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
34  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Parametric verification ongoing.  
S12-1860-Rev. C, 13-Aug-12  
Document Number: 66724  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SQ4920EY-T1_GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI7938DP-T1-GE3 VISHAY

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