Datasheet > SQ4940CEY

SQ4940CEY

更新时间： 2024-11-06 14:49:51

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET

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SQ4940CEY 数据手册

SQ4940CEY

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SO-8 Dual

D₂

• 100 % R_gand UIS tested

• AEC-Q101 qualified

D₁

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

₁

S₁

Top View

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 10 V

_DS(on)() at V_GS= 4.5 V

0.024

0.029

N-Channel MOSFET

I_D(A)

Configuration

Dual

ORDERING INFORMATION

Package

SO-8

SQ4940CEY

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C ^a

T_C= 125 °C

Continuous drain current

I_D

5.3

Continuous source current (diode conduction)

Pulsed drain current ^b

I_S

3.6

I_DM

I_AS

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

T_C= 25 °C

1.3

Maximum power dissipation

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

112

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR-4 material)

S23-0475-Rev. B, 19-Jun-2023

Document Number: 62020

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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