Datasheet > SQ4949EY

SQ4949EY

更新时间： 2024-11-17 01:19:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	206K
描述
Automotive P-Channel 30 V (D-S) 175 Â°C MOSFET

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SQ4949EY 数据手册

SQ4431EY

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®Power MOSFET

• 100 % R_gand UIS Tested

• AEC-Q101 Qualified^c

- 30

R_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

0.030

0.052

- 10.8

Single

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912

I_D(A)

Configuration

SO-8

P-Channel MOSFET

Top View

ORDERING INFORMATION

Package

SO-8

SQ4431EY-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 30

V_GS

T_C= 25 °C

- 10.8

Continuous Drain Current

I_D

_C= 125 °C

- 6.2

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

- 5.4

I_DM

I_AS

- 43.2

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 21

L = 0.1 mH

T_C= 25 °C

E_AS

Maximum Power Dissipation^a

P_D

_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

S13-1183-Rev. C, 20-May-13

Document Number: 65527

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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