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SQ4946EY-T1-E3 PDF预览

SQ4946EY-T1-E3

更新时间: 2024-11-05 21:10:55
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 116K
描述
TRANSISTOR 4.5 A, 60 V, 0.055 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power

SQ4946EY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71雪崩能效等级(Eas):7.2 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):4.5 A最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.4 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SQ4946EY-T1-E3 数据手册

 浏览型号SQ4946EY-T1-E3的Datasheet PDF文件第2页浏览型号SQ4946EY-T1-E3的Datasheet PDF文件第3页浏览型号SQ4946EY-T1-E3的Datasheet PDF文件第4页浏览型号SQ4946EY-T1-E3的Datasheet PDF文件第5页浏览型号SQ4946EY-T1-E3的Datasheet PDF文件第6页浏览型号SQ4946EY-T1-E3的Datasheet PDF文件第7页 
SQ4946EY  
Vishay Siliconix  
Automotive  
Dual N-Channel 60 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• TrenchFET® Power MOSFET  
60  
0.055  
4.5  
Pb-free  
• Package with Low Thermal Resistance  
Available  
R
DS(on) (Ω) at VGS = 10 V  
RoHS*  
ID (A)  
AEC-Q101 RELIABILITY  
• Passed all AEC-Q101 Reliability Testing  
• Characterization Ongoing  
COMPLIANT  
Configuration  
Dual  
D
1
D
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
1
G
2
G
S
1
S
2
Top View  
N-Channel MOSFET  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free  
SnPb  
SO-8  
SQ4946EY-T1-E3  
SQ4946EY-T1  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
60  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
TC = 70 °C  
4.5  
Continuous Drain Currenta  
ID  
3.8  
A
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
2
IDM  
EAS  
IAS  
30  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Current  
7.2  
mJ  
A
L = 0.1 mH  
12  
2.4  
TC = 25 °C  
TA = 70 °C  
Maximum Power Dissipationb  
PD  
W
1.7  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
62.5  
-
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Case (Drain)  
RthJC  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 µs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
Document Number: 74492  
S-81560-Rev. C, 23-Oct-08  
www.vishay.com  
1

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