Datasheet > SQ4946CEY

SQ4946CEY

更新时间： 2024-09-30 14:54:51

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威世 - VISHAY		/
页数	文件大小	规格书
8页	209K
描述
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

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SQ4946CEY 数据手册

SQ4946CEY

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

SO-8 Dual

• TrenchFET^®power MOSFET

D₂

• 100 % R_gand UIS tested

• AEC-Q101 qualified

D₁

• Material

categorization:

for

definitions of compliance please

see www.vishay.com/doc?99912

G₂

S₂

₁

S₁

Top View

PRODUCT SUMMARY

V_DS(V)

_DS(on)(Ω) at V_GS= 10 V

_DS(on)(Ω) at V_GS= 4.5 V

0.040

0.055

N-Channel MOSFET

I_D(A) per leg

Configuration

Dual

ORDERING INFORMATION

Package

SO-8

SQ4946CEY

(for detailed order number please see www.vishay.com/doc?79776)

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current

I_D

T_C= 125 °C

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

3.6

I_DM

I_AS

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

_C= 25 °C

E_AS

16.2

1.3

Maximum power dissipation

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Package limited

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

c. When mounted on 1" square PCB (FR4 material)

S21-0029-Rev. B, 26-Jan-2021

Document Number: 77342

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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