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SN74GTL2010PWE4 PDF预览

SN74GTL2010PWE4

更新时间: 2024-11-26 04:31:15
品牌 Logo 应用领域
德州仪器 - TI 驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
15页 149K
描述
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR

SN74GTL2010PWE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:GREEN, PLASTIC, TSSOP-24针数:24
Reach Compliance Code:unknown风险等级:5.14
Is Samacsys:N接口集成电路类型:INTERFACE CIRCUIT
JESD-30 代码:R-PDSO-G24JESD-609代码:e4
长度:7.8 mm湿度敏感等级:1
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP24,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:2.5,3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Other Interface ICs
最大供电电压:3.6 V最小供电电压:3 V
标称供电电压:3.3 V电源电压1-最大:2.64 V
电源电压1-分钟:2.36 V电源电压1-Nom:2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mmBase Number Matches:1

SN74GTL2010PWE4 数据手册

 浏览型号SN74GTL2010PWE4的Datasheet PDF文件第2页浏览型号SN74GTL2010PWE4的Datasheet PDF文件第3页浏览型号SN74GTL2010PWE4的Datasheet PDF文件第4页浏览型号SN74GTL2010PWE4的Datasheet PDF文件第5页浏览型号SN74GTL2010PWE4的Datasheet PDF文件第6页浏览型号SN74GTL2010PWE4的Datasheet PDF文件第7页 
GTL2010  
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR  
www.ti.com  
SCDS221SEPTEMBER 2006  
FEATURES  
PW PACKAGE  
Provides Bidirectional Voltage Translation  
With No Direction Control Required  
(TOP VIEW)  
GND  
G
D
1
2
24  
23  
22  
REF  
Allows Voltage Level Translation From 1 V up  
to 5 V  
S
REF  
REF  
Provides Direct Interface With GTL, GTL+,  
LVTTL/TTL, and 5-V CMOS Levels  
S1 3  
D1  
S2  
S3  
S4  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
D9  
D10  
4
5
6
21  
20  
Low On-State Resistance Between Input and  
Output Pins (Sn/Dn)  
19  
18  
17  
Supports Hot Insertion  
S5 7  
No Power Supply Required – Will Not Latch  
Up  
8
S6  
S7  
9
5-V-Tolerant Inputs  
16  
15  
10  
11  
12  
Low Standby Current  
S8  
Flow-Through Pinout for Ease of Printed  
Circuit Board Trace Routing  
14  
13  
S9  
S10  
ESD Protection Exceeds JESD 22  
– 2000-V Human-Body Model (A114-4)  
– 1000-V Charged-Device Model (C101)  
APPLICATIONS  
Bidirectional or Unidirectional Applications  
Requiring Voltage-Level Translation From  
Any Voltage (1 V to 5 V) to Any Voltage (1 V  
to 5 V)  
Low Voltage Processor I2C Port Translation  
to 3.3-V and/or 5-V I2C Bus Signal Levels  
GTL/GTL+ Translation to LVTTL/TTL Signal  
Levels  
DESCRIPTION/ORDERING INFORMATION  
The GTL2010 provides ten NMOS pass transistors (Sn and Dn) with a common gate (GREF) and a reference  
transistor (SREF and DREF). The low ON-state resistance of the switch allows connections to be made with  
minimal propagation delay. With no direction control pin required, the device allows bidirectional voltage  
translations any voltage (1 V to 5 V) to any voltage (1 V to 5 V).  
When the Sn or Dn port is LOW, the clamp is in the ON state and a low-resistance connection exists between  
the Sn and Dn ports. Assuming the higher voltage is on the Dn port, when the Dn port is HIGH, the voltage on  
the Sn port is limited to the voltage set by the reference transistor (SREF). When the Sn port is HIGH, the Dn port  
is pulled to VCC by the pullup resistors.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2006, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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