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SN54LVT543_07

更新时间： 2024-10-31 05:04:55
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德州仪器 - TI 输出元件
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15页 386K
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3.3-V ABT OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

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SN54LVT543_07 数据手册

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SN54LVT543, SN74LVT543  
3.3-V ABT OCTAL REGISTERED TRANSCEIVERS  
WITH 3-STATE OUTPUTS  
SCBS137D – MAY 1992 – REVISED JULY 1995  
SN54LVT543 . . . JT PACKAGE  
SN74LVT543 . . . DB, DW, OR PW PACKAGE  
(TOP VIEW)  
State-of-the-Art Advanced BiCMOS  
Technology (ABT) Design for 3.3-V  
Operation and Low Static Power  
Dissipation  
LEBA  
OEBA  
A1  
1
2
3
4
5
6
7
8
9
10  
24  
V
CC  
Support Mixed-Mode Signal Operation (5-V  
Input and Output Voltages With 3.3-V V  
23 CEBA  
22 B1  
21 B2  
20 B3  
19 B4  
18 B5  
17 B6  
16 B7  
)
CC  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
Support Unregulated Battery Operation  
Down to 2.7 V  
Typical V  
< 0.8 V at V  
(Output Ground Bounce)  
OLP  
= 3.3 V, T = 25°C  
CC  
A
ESD Protection Exceeds 2000 V Per  
MIL-STD-883C, Method 3015; Exceeds  
200 V Using Machine Model  
(C = 200 pF, R = 0)  
15  
B8  
CEAB 11  
GND 12  
14 LEAB  
13 OEAB  
Latch-Up Performance Exceeds 500 mA  
Per JEDEC Standard JESD-17  
SN54LVT543 . . . FK PACKAGE  
(TOP VIEW)  
Bus-Hold Data Inputs Eliminate the Need  
for External Pullup Resistors  
Support Live Insertion  
Package Options Include Plastic  
Small-Outline (DW), Shrink Small-Outline  
(DB), and Thin Shrink Small-Outline (PW)  
Packages, Ceramic Chip Carriers (FK), and  
Ceramic (JT) DIPs  
4
3
2
1
28 27 26  
25  
A2  
A3  
A4  
NC  
A5  
A6  
A7  
B2  
B3  
B4  
5
24  
23  
6
7
22 NC  
21 B5  
20 B6  
19 B7  
8
description  
9
10  
11  
Theseoctaltransceiversaredesignedspecifically  
for low-voltage (3.3-V) V operation, but with the  
CC  
12 13 14 15 16 17 18  
capability to provide a TTL interface to a 5-V  
system environment.  
The ’LVT543 contain two sets of D-type latches for  
temporary storage of data flowing in either  
direction. Separate latch-enable (LEAB or LEBA)  
and output-enable (OEAB or OEBA) inputs are  
provided for each register to permit independent  
control in either direction of data flow.  
NC – No internal connection  
The A-to-B enable (CEAB) input must be low in order to enter data from A or to output data from B. If CEAB  
is low and LEAB is low, the A-to-B latches are transparent; a subsequent low-to-high transition of LEAB puts  
the A latches in the storage mode. With CEAB and OEAB both low, the 3-state B outputs are active and reflect  
the data present at the output of the A latches. Data flow from B to A is similar but requires using the CEBA,  
LEBA, and OEBA inputs.  
Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1995, Texas Instruments Incorporated  
UNLESS OTHERWISE NOTED this document contains PRODUCTION  
DATA information current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all  
parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...15

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