5秒后页面跳转
SMBSR1010 PDF预览

SMBSR1010

更新时间: 2024-11-02 21:10:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管
页数 文件大小 规格书
3页 43K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM),

SMBSR1010 技术参数

生命周期:Obsolete包装说明:R-PDSO-C2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:50 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SMBSR1010 数据手册

 浏览型号SMBSR1010的Datasheet PDF文件第2页浏览型号SMBSR1010的Datasheet PDF文件第3页 
SK12  
thru  
SK110  
9261 Owensmouth Ave.  
Chatsworth, Ca 91311  
Phone: (818) 701-4933  
Fax: (818) 701-4939  
Features  
·
·
·
·
·
·
Schottky Barrier Rectifier  
1 Amp Schottky  
Rectifier  
20 - 100 Volts  
Guard Ring Protection  
Low Forward Voltage  
Reverse Energy Tested  
High Current Capability  
Extremely Low Thermal Resistance  
DO-214AA  
Maximum Ratings  
(SMBJ)  
·
·
·
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
20V  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
J
SMB5817  
SMB5818  
SMB5819  
SMBSR105  
SMBSR106  
SMBSR108  
SMBSR1010  
SK12  
SK13  
SK14  
SK15  
SK16  
SK18  
SK110  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
30V  
40V  
50V  
60V  
80V  
100V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 90°C  
INCHES  
MIN  
.075  
.081  
.004  
---  
.030  
.065  
.205  
.160  
.130  
MM  
MIN  
1.90  
2.06  
.10  
---  
.76  
1.65  
5.21  
4.06  
3.30  
DIM  
A
B
C
D
E
MAX  
.115  
.087  
.008  
.02  
.060  
.084  
.220  
.180  
.155  
MAX  
2.92  
2.21  
.20  
NOTE  
1
Peak Forward Surge  
Current  
IFSM  
50A  
8.3ms, half sine  
.51  
1.52  
2.13  
5.59  
4.57  
3.94  
Maximum  
Instantaneous  
Forward Voltage  
F
G
H
J
SK12  
SK13  
SK14  
VF  
.45V  
.55V  
.60V  
.72V  
.80V  
IFM = 1.0A;  
TJ = 25°C*  
1) Maximum Jedec Spec is .096” or 2.44 MM  
SUGGESTED SOLDER  
PAD LAYOUT  
SK15-16  
SK18-110  
0.090  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
Typical Junction  
Capacitance  
SK12  
IR  
.5mA  
TJ = 25°C  
0.085”  
CJ  
230pF  
50pF  
Measured at  
1.0MHz, VR=4.0V  
SK13-SK110  
0.070”  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
Santa Ana: (714) 979-8220  
Sertech Labs: (617) 924-9280  
Scottsdale: (602) 941-6300  
Ireland: (353) 65-40044  
Colorado: (303) 469-2161  
Bombay: (91) 22-832-002  
Watertown: (617) 926-0404  
Hong Kong: (852) 2692-1202  
Chatsworth: (818) 701-4933  

与SMBSR1010相关器件

型号 品牌 获取价格 描述 数据表
SMBSR105 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA,
SMBSR106 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-214AA
SMBSR108 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AA,
SMBSR110 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA,
SMBT001D00 JAE

获取价格

COAXIAL CONNECTORS
SMBT2222 INFINEON

获取价格

NPN Silicon Switching Transistors
SMBT2222A INFINEON

获取价格

NPN Silicon Switching Transistors
SMBT2222A SURGE

获取价格

Small Signal Bipolar Transistor, TO-236,
SMBT2222A / MMBT2222A INFINEON

获取价格

NPN 硅开关晶体管
SMBT2222A_07 INFINEON

获取价格

NPN Silicon Switching Transistor Low collector-emitter saturation voltage