Datasheet > SMBT2222A_07

SMBT2222A_07

更新时间： 2024-11-08 06:12:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管
页数	文件大小	规格书
8页	83K
描述
NPN Silicon Switching Transistor Low collector-emitter saturation voltage

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中文翻译

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数据手册

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SMBT2222A_07 数据手册

SMBT2222A/MMBT2222A

NPN Silicon Switching Transistor

• Low collector-emitter saturation voltage

• Complementary type: SMBT2907AW (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

SMBT2222A/MMBT2222A s1P

SOT23

1 = B

2 = E

3 = C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CBO

EBO

600

330

Total power dissipation-

tot

T ≤ 77 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 220

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-19

12 3 4 5 6 7 8

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