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SMB10J11AHE3/5B PDF预览

SMB10J11AHE3/5B

更新时间: 2024-09-15 22:51:15
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
6页 114K
描述
TVS DIODE 11V 18.2V DO214AA

SMB10J11AHE3/5B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.72
其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY最大击穿电压:13.5 V
最小击穿电压:12.2 V击穿电压标称值:12.85 V
最大钳位电压:18.2 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:11 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

SMB10J11AHE3/5B 数据手册

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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A  
www.vishay.com  
Vishay General Semiconductor  
®
High Power Density Surface-Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Available in unidirectional and bidirectional  
• Excellent clamping capability  
• Very fast response time  
Available  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMB (DO-214AA)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
VBR (unidirectional)  
6.4 V to 49.1 V  
V
BR (bidirectional)  
6.4 V to 49.1 V  
5.0 V to 40 V  
1000 W  
VWM  
MECHANICAL DATA  
PPPM (unidirectional)  
PPM (bidirectional)  
Case: SMB (DO-214AA)  
P
800 W  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
IFSM (uni-directional only)  
100 A  
TJ max.  
150 °C  
Polarity  
Unidirectional, bidirectional  
SMB (DO-214AA)  
Package  
(“_X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: for unidirectional types the color band denotes  
cathode end, no marking on bidirectional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
1000  
UNIT  
unidirectional  
Peak pulse power dissipation with a 10/1000 μs waveform  
(fig. 1)  
(1)(2)  
PPPM  
W
bidirectional  
800  
(1)  
Peak pulse current with a 10/1000 μs waveform  
IPPM  
See next table  
100  
A
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 20-Jul-2020  
Document Number: 88422  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SMB10J11AHE3/5B 替代型号

型号 品牌 替代类型 描述 数据表
SMB10J11A-E3/5B VISHAY

完全替代

TVS DIODE 11V 18.2V DO214AA
SMB10J11HE3/5B VISHAY

类似代替

Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,
SMB10J11A-E3/52 VISHAY

功能相似

TVS DIODE 11V 18.2V DO214AA

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