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SMB10J11HE3/52 PDF预览

SMB10J11HE3/52

更新时间: 2024-10-29 20:05:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 114K
描述
Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,

SMB10J11HE3/52 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
击穿电压标称值:13.55 V最大钳位电压:20.1 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:UNIDIRECTIONAL
最大重复峰值反向电压:11 V子类别:Transient Suppressors
表面贴装:YESBase Number Matches:1

SMB10J11HE3/52 数据手册

 浏览型号SMB10J11HE3/52的Datasheet PDF文件第2页浏览型号SMB10J11HE3/52的Datasheet PDF文件第3页浏览型号SMB10J11HE3/52的Datasheet PDF文件第4页浏览型号SMB10J11HE3/52的Datasheet PDF文件第5页浏览型号SMB10J11HE3/52的Datasheet PDF文件第6页 
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A  
Vishay General Semiconductor  
High Power Density Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
DO-214AA (SMB)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 40 V  
1000 W  
800 W  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
P
PPM (uni-directional)  
PPPM (bi-directional)  
FSM (uni-directional only)  
TJ max.  
I
100 A  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Peak pulse power dissipation with a 10/1000 µs  
waveform (1)(2) (Fig. 1)  
uni-directional  
bi-directional  
1000  
800  
PPPM  
W
Peak pulse current with a 10/1000 µs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
IPPM  
IFSM  
See next table  
100  
A
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number: 88422  
Revision: 22-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SMB10J11HE3/52 替代型号

型号 品牌 替代类型 描述 数据表
SMB10J11AHE3/52 VISHAY

完全替代

TVS DIODE 11V 18.2V DO214AA

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