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SMB10J12A-HE3/52 PDF预览

SMB10J12A-HE3/52

更新时间: 2024-11-06 14:44:47
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
6页 93K
描述
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

SMB10J12A-HE3/52 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

SMB10J12A-HE3/52 数据手册

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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A  
www.vishay.com  
Vishay General Semiconductor  
®
High Power Density Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AA (SMB)  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 40 V  
1000 W  
800 W  
MECHANICAL DATA  
P
PPM (uni-directional)  
PPM (bi-directional)  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
P
Base P/N-E3  
- RoHS compliant, commercial grade  
IFSM (uni-directional only)  
100 A  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
1000  
UNIT  
uni-directional  
Peak pulse power dissipation  
PPPM  
W
with a 10/1000 μs waveform (1)(2) (fig. 1)  
bi-directional  
800  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
PD  
See next table  
100  
A
W
°C  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to 150  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 13-Mar-12  
Document Number: 88422  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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