Datasheet > SMB10J12C

SMB10J12C

更新时间： 2024-11-06 13:47:43

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技术参数
数据手册

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SMB10J12C 技术参数

Case Style：	SMB	Ppk(W)：	1000
MIN_(V)：	13.30	MAX_(V)：	16.30
Vwm_(V)：	5.0	Ir_(uA)：	12.0
Ippm_(A)：	45.45	Vc_(V)：	22.0
class：	Diodes

SMB10J12C 数据手册

SMB10J Series

Reverse Voltage: 5.0 to 120 V

Peak Pulse Power: 1000 W

Surface Mount

Transient Voltage Suppressors

SMB/ DO-214AA

Features

●

Glass passivated chip

0.191 [4.85]

0.171 [4.35]

●

1000 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle):0.01 %

0.087 [2.20]

0.078 [1.96]

0.148 [3.75]

0.130 [3.30]

●

Low leakage

●

Uni and Bidirectional unit

●

Excellent clamping capability

●

Very fast response time

0.012 [0.30]

0.006 [0.15]

●

RoHS compliant

Mechanical Data

0.096 [2.44]

0.084 [2.13]

●

Case: Molded plastic

●

Epoxy: UL 94V-0 rate flame retardant

0.008 [0.20]

0.059 [1.51]

0.030 [0.75]

●

[0.00]

Lead: Solderable per MIL-STD-750, method

0.217 [5.50]

0.201 [5.10]

2026

●

Polarity: Color band denotes cathode end

except Bipolar

●

Mounting position: Any

Maximum Ratings(T_A=25℃ unless otherwise noted)

Value

Unit

Parameter

Symbol

Peak power dissipation with a 10/1000μs waveform⁽¹⁾

P_PP

1000

See Next Table

5.0

Peak pulse current with a 10/1000μs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C

Peak forward surge current, 8.3 ms single half sine-wave

I_PP

P_D

I_FSM

100

unidirectional only⁽²⁾

Maximum instantaneous forward voltage at 25 A for

unidirectional only⁽³⁾

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

- 55 to +150

°C

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3)V_F<3.5V for devices of V_BR<50V.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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