SMB10J12A

更新时间： 2024-11-06 06:12:15

品牌	Logo	应用领域
威世 - VISHAY		瞬态抑制器二极管
页数	文件大小	规格书
6页	119K
描述
High Power Density Surface Mount TRANSZORB® Transient Voltage Suppressors

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技术参数
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SMB10J12A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.91
击穿电压标称值：	14 V	最大钳位电压：	19.9 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e0
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	12 V
子类别：	Transient Suppressors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SMB10J12A 数据手册

SMB10(8)J5.0(C) thru SMB10(8)J40(C)A

Vishay General Semiconductor

High Power Density Surface Mount TRANSZORB^®

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

DO-214AA (SMB)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 40 V

1000 W

800 W

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

_PPM(uni-directional)

P_PPM(bi-directional)

_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Peak pulse power dissipation with a 10/1000 µs

waveform ⁽¹⁾⁽²⁾(Fig. 1)

uni-directional

bi-directional

1000

800

P_PPM

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

I_PPM

I_FSM

See next table

100

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88422

Revision: 22-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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与SMB10J12A相关器件

型号	品牌	获取价格	描述	数据表
SMB10J12A/CA	SWST	获取价格	瞬态电压抑制管
SMB10J12A-E3	VISHAY	获取价格	DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
SMB10J12A-E3/2C	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMB10J12A-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMB10J12A-E3/52	VISHAY	获取价格	DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB,
SMB10J12A-E3/55	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMB10J12A-E3/5B	VISHAY	获取价格	TVS DIODE 12V 19.9V DO214AA
SMB10J12AHE3/52	VISHAY	获取价格	TVS DIODE 12V 19.9V DO214AA
SMB10J12A-HE3/52	VISHAY	获取价格	DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB,
SMB10J12AHE3/5B	VISHAY	获取价格	TVS DIODE 12V 19.9V DO214AA

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