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SMB10J12A-E3/51 PDF预览

SMB10J12A-E3/51

更新时间: 2024-10-30 05:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 105K
描述
Trans Voltage Suppressor Diode, 1000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

SMB10J12A-E3/51 数据手册

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SMB10(8)J5.0(C) thru SMB10(8)J40(C)A  
Vishay General Semiconductor  
High Power Density Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in Unidirectional and Bidirectional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020C, LF max peak  
DO-214AA (SMB)  
of 260 °C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
MAJOR RATINGS AND CHARACTERISTICS  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
VWM  
5.0 V to 40 V  
1000 W  
800 W  
P
PPM (Unidirectional)  
P
PPM (Bidirectional)  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Epoxy meets UL 94V-0 flammability rating  
IFSM (Unidirectional only)  
Tj max.  
100 A  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: For unidirectional types the color band  
denotes cathode end, no marking on bidirectional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Peak pulse power dissipation with a 10/1000 µs  
waveform (1,2) (see Fig. 1)  
Unidirectional  
Bidirectional  
1000  
800  
PPPM  
W
Peak pulse current with a 10/1000 µs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
IPPM  
IFSM  
see next table  
100  
A
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number 88422  
12-Sep-06  
www.vishay.com  
1

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