SM8S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressors
Stand-off Voltage 10 to 43V
Peak Pulse Power 6600W (10/1000µs)
5200W (10/10,000µs)
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.366(9.3)
0.343(8.7)
0.116(3.0)
0.093(2.4)
0.413(10.5)
0.374(9.5)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
LEAD 1
0.150(3.8)
0.366(9.3)
0.138(3.5)
0.098(2.5)
0.126(3.2)
0.343(8.7)
0.197(5.0)
0.185(4.7)
0.606(15.4)
0.583(14.8)
0.028(0.7)
0.020(0.5)
0.016 (0.4) Min.
*
Patent #’s:
4,980,315
5,166,769
5,278,095
0.098(2.5)
0.059(1.5)
LEAD 2/METAL HEATSINK
Features
Mechanical Data
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passiva-
tion and patented PAR® construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at TJ = 175°C
Case: Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Packaging codes/options:
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
• Low forward voltage drop
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
6600
5200
PPPM
W
Steady state power dissipation
PD
IPPM
8.0
See Table 1
700
W
A
Peak pulse current with a 10/1000µs waveform(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
IFSM
A
RθJC
0.90
°C/W
°C
TJ, TSTG
-55 to +175
Notes: (1) Non-repetitive current pulse derated above TA=25°C
Document Number 88387
04-Jun-04
www.vishay.com
1