Surface Mount Transient Voltage Suppressors (TVS)
SM8S Series
10 To 43 V
6600W
Description
The SM8S series is designed specifically to protect sensitive
electronic equipment from voltage transients induced by lightning
and other transient voltage events.
Features
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Junction passivation optimized design passivated anisotropic
rectifier technology
u
TJ=175°C capability suitable for high reliability and automotive
requirement
DO-218AB
u
u
u
u
u
u
Available in uni-directional polarity only
Low leakage current
Functional Diagram
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by test condition)
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
Cathode
Anode
Uni-direction
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AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in accordance
to WEEE 2002/96/EC
Primary Characteristics
VWM
PPPM (10/1000µs)
PPPM (10 /10000μs)
PD
10V to 43V
Applications
Use in sensitive electronics protection against voltage transients
induced by inductive load switching and lighting, especially for
automotive load dump protection application.
6600W
5200W
8W
IFSM
700A
TJ max.
175°C
Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise noted)
Parameter
with 10/1000µs waveform
Symbol
PPPM
Value
6600
Unit
Peak Pulse Power Dissipation
Watts
with 10/10000µs waveform
5200
Power Dissipation on Infinite Heat Sink at TA=25°C (Fig.1)
Peak Pulse Current with a 10/1000µs waveform
PD
8.0
Watt
Amps
Amps
°C
(1)
IPPM
See Next Table
700
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Operating junction and Storage Temperature Range
Typical thermal resistance, junction to case
IFSM
TJ , TSTG
R θJC
- 55 to + 175
0.90
°C /Watt
Notes:
1. Non-repetitive current pulse derated above TA=25°C
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
1 / 4
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.