Datasheet > SM8S36A

SM8S36A

更新时间： 2024-11-10 20:17:39

品牌	Logo	应用领域
鲁光 - LGE		局域网二极管
页数	文件大小	规格书
3页	6206K
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中文翻译

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技术参数
数据手册

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SM8S36A 技术参数

Case Style：	DO-218AB	Ppk(W)：	6600
MIN_(V)：	40.0	MAX_(V)：	44.2
Vwm_(V)：	36	Ir_(uA)：	10
Ippm_(A)：	114	Vc_(V)：	58.1
class：	Diodes

SM8S36A 数据手册

SM8S Series

Automotive Protection

Surface Mount

Transient Voltage Suppressors

Working Voltage: 10 to 43 V

Peak Pulse Power: 6600 W

Features

˗ Optimized glass passivated chip

T_J= 175 °C capability suitable for high

reliability and automotive requirement

6600 W peak pulse power capability with a

10/1000 ȝs waveform, repetitive rate (duty

cycle):0.01 %

PACKAGE OUTLINE DIMENSIONS(millimeters)

Meet ISO 7637-2 5a/5b and ISO 16750 load

dump test (varied by test condition)

Recommended Mounting Pad Layout

3.3

˗ AEC-Q101 qualified

3.0

˗ Low leakage current

3.5

11.0

˗ Low forward voltage drop

˗ Uni-directional polarity

˗ Excellent clamping capability

˗ Very fast response time

˗ RoHS compliant

9.5

15.8

Mechanical Data

˗ Case: DO-218AB

˗ Molding compound: UL94V-0 flammability

˗ Polarity: Heatsink is anode

DO-218AB

Maximum Ratings(T_A=25ɗ unless otherwise noted)

Parameter

Symbol

P_PP

I_PP

P_D

I_FSM

T_J, T_STG

Value

6600

5200

UNIT

Peak power dissipation with a 10/1000ȝs waveform⁽¹⁾

Peak power dissipation with a 10/10,000ȝs waveform

Peak pulse current wih a 10/1000ȝs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 25 °C

See Next Table

8.0

Peak forward surge current 8.3 ms single half sine-

Operating junction and storage temperature range

700

–55 to +175

°C

Note:

(1)Non-repetitive current pulse per Fig.2 and derated above T_A= 25 °C per Fig.1

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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