Datasheet > SKT5

SKT5

更新时间： 2024-11-28 09:23:59

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
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2页	163K
描述
THYRISTOR

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中文翻译

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数据手册

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SKT5 数据手册

SKT 5,6 Qu RG bond.

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.2 mA

V_RRM

V_DRM

I_T(AV)

I_TSM

i²t

1600

T_j= 25 °C, I_D= 0.2 mA

T_c= 80 °C, T_j= 130 °C

T_j= 130 °C, 10 ms, sin 180°

280

390

130

A²s

T_jmax

°C

THYRISTOR

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_T(DC)= 60 A

T_j= 130 °C, I_T= 25 A

T_j= 130 °C

T_j= 25 °C

V_T

1.2

0.85

13.9

100

1.98

V_RRM= 1600 V

V_T(TO)

r_T

Size: 5,6 mm x 5,6 mm

mΩ

I_GT

V_GT

I_GD

V_GD

I_H

Corner gate

T_j= 25 °C

SKT 5,6 Qu RG bond.

T_j= 115 °C

T_j= 130 °C

T_j= 25 °C

0.25

165

330

Features

• high current density due to double

mesa technology

T_j= 25 °C

I_L

• high surge current

Dynamic Characteristics

Symbol Conditions

• compatible to thick wire bonding

• compatible to all standard solder

processes

min.

typ.

max.

Unit

T_j= 130 °C

t_q

150

µs

Typical Applications*

• conrolled rectifier circuits

• solid state relays

(di/dt)_cr

(dv/dt)_cr

A/µs

V/µs

1000

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

-40

130

255

°C

T_stg

T_solder

°C

R_th(j-c)

Semipack 1 assembly

0.51

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

5.6 x 5.6

31.36

mm²

Area total

Anode

solderable (Ag/Ni)

Gate and

Cathode

bondable (Al)

Wire bond

Package

Al,diameter ≤ 500µm

tray

Chips /

Package

144

pcs

SKT

Rev. 0 – 18.02.2010

中文翻译

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