生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-D17 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 40 A |
集电极-发射极最大电压: | 1000 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
门极发射器阈值电压最大值: | 6.5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PUFM-D17 | 元件数量: | 6 |
端子数量: | 17 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 1800 W | 最大功率耗散 (Abs): | 300 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 200 ns |
标称接通时间 (ton): | 50 ns | VCEsat-Max: | 3.8 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKM40GD121D | SEMIKRON |
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Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel |
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SKM40GD123D | SEMIKRON |
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SEMITRANS IGBT Modules New Range |
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SKM40GD123D_06 | SEMIKRON |
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Standard IGBT modules |
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SKM40GD123D_09 | SEMIKRON |
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IGBT modules |
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SKM40GD123DL | SEMIKRON |
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Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, CASE D67, 17 PIN |
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SKM40GD124D | SEMIKRON |
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Low Loss IGBT Modules |
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SKM40GDL123D | SEMIKRON |
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Standard IGBT modules |
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SKM450GB12E4 | SEMIKRON |
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IGBT Modules SEMITRANS 3 (106x62x31) |
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SKM450GB12E4D1 | SEMIKRON |
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IGBT Modules SEMITRANS 3 (106x62x31) |
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SKM450GB12T4 | SEMIKRON |
获取价格 |
IGBT Modules SEMITRANS 3 (106x62x31) |
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