Datasheet > SKM450GB12T4

SKM450GB12T4

更新时间： 2023-12-06 20:07:45

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	317K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

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中文翻译

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数据手册

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SKM450GB12T4 数据手册

SKM450GB12T4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

699

538

450

1350

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

SEMITRANS^®3

Fast IGBT4 Modules

SKM450GB12T4

Features

V_CC= 800 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

V_CES≤ 1200 V

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

461

345

400

1200

1980

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

AC sinus 50 Hz, t = 1 min

ꢀ IGBT4 = 4. generation fast trench IGBT

(Infineon)

-40 ... 175

°C

Module

I_t(RMS)

T_stg

ꢀ CAL4 = Soft switching 4. generation

CAL-diode

500

-40 ... 125

4000

°C

ꢀ Insulated copper baseplate using DBC

technology (Direct Bonded Copper)

ꢀ Increased power cycling capability

ꢀ With integrated gate resistor

ꢀ For higher switching frequenzies up to

20kHz

V_isol

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

ꢀ UL recognized, file no. E63532

Typical Applications*

I_C= 450 A

T_j= 25 °C

V_CE(sat)

1.84

2.23

2.07

2.42

ꢀ AC inverter drives

_GE= 15 V

T_j= 150 °C

ꢀ UPS

chiplevel

ꢀ Electronic welders at fsw up to 20 kHz

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

2.3

3.4

5.8

0.90

0.80

2.6

3.6

6.3

mΩ

Ω

chiplevel

Remarks

ꢀ Case temperature limited

to T_c= 125°C max.

ꢀ Recommended T_op= -40 ... +150°C

ꢀ Product reliability results valid

for T_j= 150°C

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 16.4 mA

T_j= 25 °C

5.3

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

27.2

1.76

1.50

2500

1.9

224

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 450 A

_GE= +15/-15 V

_{G on}= 1 Ω

_{G off}= 1 Ω

460

di/dt_on= 8300 A/µs

di/dt_off= 3800 A/µs

du/dt = 3700 V/µs

T_j= 150 °C

E_off

R_th(j-c)

per IGBT

0.062

K/W

Rev. 1.0 – 01.03.2016

12 3 4 5 6

中文翻译

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