SKM450GB12T4D1
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
699
538
450
1350
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
VCC = 800 V
SEMITRANS® 3
Fast IGBT4 Modules
SKM450GB12T4D1
Features*
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
1200
623
466
500
1000
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
• IGBT4 = 4th generation fast trench
IGBT (Infineon)
2736
-40 ... 175
A
°C
• CAL4 = Soft switching 4th generation
CAL-diode
Module
It(RMS)
Tstg
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequencies up to
20kHz
500
-40 ... 125
4000
A
°C
V
module without TIM
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
• UL recognized, file no. E63532
• SKM…D1: increased diode
performance
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 450 A
Tj = 25 °C
VCE(sat)
1.84
2.23
2.07
2.42
V
V
Typical Applications
V
GE = 15 V
Tj = 150 °C
• AC inverter drives
chiplevel
• UPS
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
2.3
3.4
5.8
0.90
0.80
2.6
3.6
6.3
5
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
• Electronic welders at fsw up to 20 kHz
chiplevel
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
VGE = 15 V
chiplevel
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE=VCE, IC = 16.4 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
5.3
27.2
1.76
1.50
2500
1.9
248
59
28
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 450 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 1 Ω
G off = 1 Ω
492
100
di/dton = 8300 A/µs
di/dtoff = 3800 A/µs
dv/dt = 3700 V/µs
Tj = 150 °C
Eoff
48
mJ
Rth(j-c)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
0.062
K/W
K/W
0.028
0.017
Rth(c-s)
K/W
GB
© by SEMIKRON
Rev. 1.0 – 23.09.2019
1