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SKM40GD123DL PDF预览

SKM40GD123DL

更新时间: 2024-02-22 02:50:02
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 局域网电动机控制晶体管
页数 文件大小 规格书
6页 1420K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, CASE D67, 17 PIN

SKM40GD123DL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-204
包装说明:FLANGE MOUNT, R-XUFM-X17针数:2
Reach Compliance Code:compliant风险等级:5.81
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):40 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X17JESD-609代码:e2
元件数量:6端子数量:17
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver (Sn/Ag)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):400 ns标称接通时间 (ton):70 ns
VCEsat-Max:3 VBase Number Matches:1

SKM40GD123DL 数据手册

 浏览型号SKM40GD123DL的Datasheet PDF文件第2页浏览型号SKM40GD123DL的Datasheet PDF文件第3页浏览型号SKM40GD123DL的Datasheet PDF文件第4页浏览型号SKM40GD123DL的Datasheet PDF文件第5页浏览型号SKM40GD123DL的Datasheet PDF文件第6页 
SEMITRANS®  
IGBT Modules  
M
Absolute Maximum Ratings  
Values  
Symbol  
Conditions 1)  
Units  
VCES  
VCGR  
IC  
1200  
1200  
40 / 30  
V
V
A
SKM 40 GD 123 D  
SKM 40 GD 123 D L*)  
SKM 40 GDL 123 D **)  
RGE = 20 kΩ  
Tcase = 25/80 °C  
Tcase = 25/80 °C; tp = 1 ms  
ICM  
70 / 50  
A
VGES  
Ptot  
Tj, (Tstg  
± 20  
220  
V
per IGBT, Tcase = 25 °C  
W
°C  
V
)
– 40 . . .+150 (125)  
2 500  
Visol  
AC, 1 min.  
humidity  
climate  
DIN 40 040  
DIN IEC 68 T.1  
Class F  
40/125/56  
Inverse Diode  
IF= – IC  
Tcase = 25/80 °C  
45 / 30  
70 / 50  
350  
A
A
IFM= – ICM Tcase = 25/80 °C; tp = 1 ms  
Sixpack  
IFSM  
tp = 10 ms; sin.; Tj = 150 °C  
tp = 10 ms; Tj = 150 °C  
A
I2t  
600  
A2s  
Characteristics  
Symbol  
Conditions 1)  
min.  
typ.  
max.  
Units  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0, IC = 0,8 mA  
VGE = VCE, IC = 1 mA  
VCES  
4,5  
5,5  
0,1  
3
6,5  
1
200  
V
V
mA  
mA  
nA  
V
GD  
GDL **)  
VGE = 0  
Tj = 25 °C  
Features  
VCE = VCES Tj = 125 °C  
VGE = 20 V, VCE = 0  
IC = 25 A VGE = 15 V;  
IC = 40 A Tj = 25 (125) °C  
VCE = 20 V, IC = 25 A  
MOS input (voltage controlled)  
N channel, homogeneous Si  
Low inductance case  
Very low tail current with low  
temperature dependence  
High short circuit capability,  
self limiting to 6 * Icnom  
Latch-up free  
IGES  
VCEsat  
VCEsat  
gfs  
2,5(3,1) 3(3,7)  
3,1(3,9)  
20  
V
S
CCHC  
Cies  
Coes  
Cres  
LCE  
per IGBT  
VGE = 0  
VCE = 25 V  
f = 1 MHz  
1600  
250  
110  
300  
2100  
300  
150  
60  
pF  
pF  
pF  
pF  
nH  
Fast & soft inverse CAL  
diodes8)  
Isolated copper baseplate  
using DCB Direct Copper Bon-  
ding Technology  
Large clearance (9 mm) and  
creepage distances (13 mm).  
td(on)  
tr  
td(off)  
VCC = 600 V  
70  
55  
400  
40  
3,8  
2,3  
ns  
ns  
ns  
ns  
mWs  
mWs  
VGE = + 15 V / - 15 V3)  
IC = 25 A, ind. load  
RGon = RGoff = 40 Ω  
Tj = 125 °C  
tf  
Eon  
Eoff  
5)  
5)  
Typical Applications  
Inverse Diode 8)  
VF = VEC  
VF = VEC  
VTO  
rT  
IRRM  
Switched mode power supplies  
Three phase inverters for  
AC motor speed control  
Pulse frequencies also above  
15 kHz  
IF = 25 A VGE = 0 V;  
IF = 40 A Tj = 25 (125) °C  
Tj = 125 °C  
2,0(1,8)  
2,3(2,1)  
1,1  
25  
19(25)  
1,5(4,5)  
2,5  
1,2  
44  
V
V
V
mΩ  
A
µC  
Tj = 125 °C  
IF = 25 A; Tj = 25 (125) °C2)  
IF = 25 A; Tj = 25 (125) °C2)  
Qrr  
1)  
2)  
Tcase = 25 °C, unless otherwise  
specified  
IF = – IC, VR = 600 V,  
– diF/dt = 500 A/µs, VGE = 0 V  
Use VGEoff = -5 ... -15 V  
See fig. 2 + 3; RGoff = 40 Ω  
CAL = Controlled Axial Lifetime  
Technology.  
Thermal Characteristics  
Rthjc  
Rthjc  
Rthch  
per IGBT  
per diode  
per module  
0,56  
1,0  
0,05  
°C/W  
°C/W  
°C/W  
3)  
5)  
8)  
*) Main terminals = 2 mm dia.  
outline B 6 – 68  
**) Sevenpack, picture B6 - 99  
Cases and mech. data B6 - 74  
Sixpack and Sevenpack  
by SEMIKRON  
0898  
B 6 – 69  

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