Datasheet > SKM500GB17E4

SKM500GB17E4

更新时间： 2024-09-14 14:54:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	574K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

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中文翻译

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数据手册

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SKM500GB17E4 数据手册

SKM500GB17E4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1700

780

599

500

1500

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITRANS^®3

IGBT4 Modules

SKM500GB17E4

Features*

V_CC= 1000 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1700 V

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

561

414

1000

2880

-40 ... 175

°C

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

• IGBT4 = 4th generation medium fast

trench IGBT (Infineon)

Module

I_t(RMS)

T_stg

500

-40 ... 125

4000

°C

• CAL4 = Soft switching 4th generation

CAL-Diode

• Insulated copper baseplate using DBC

Technology (Direct Copper Bonding)

• With integrated Gate resistor

• For switching frequencies up to 8kHz

• UL recognized, file no. E63532

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Typical Applications

• AC inverter drives

• UPS

I_C= 500 A

T_j= 25 °C

V_CE(sat)

1.90

2.45

2.20

2.80

_GE= 15 V

T_j= 150 °C

chiplevel

Remarks

• Case temperature limited to T_C= 125°C

max.

• Recommended T_j,op= -40 ... +150°C

• Product reliability results valid for T_j=

150°C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

1.00

0.90

1.80

3.1

1.10

1.00

2.2

3.6

6.4

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 20 mA

T_j= 25 °C

5.2

5.8

V_GE= 0 V

_CE= 1700 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

40.4

1.60

1.48

4000

1.0

190

135

760

160

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 1200 V

T_j= 150 °C

_C= 500 A

_GE= +15/-15 V

_{G on}= 2 Ω

_{G off}= 1 Ω

di/dt_on= 12500 A/

µs

di/dt_off= 2400 A/µs

dv/dt = 2050 V/µs

L_s= 25 nH

T_j= 150 °C

E_off

210

R_th(j-c)

per IGBT

0.048

K/W

Rev. 2.0 – 13.04.2021

12 3 4 5 6

中文翻译

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