Datasheet > SKM450GB33F

SKM450GB33F

更新时间： 2024-09-14 14:53:39

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	661K
描述
IGBT Modules SEMITRANS 20 (140x100x38)

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中文翻译

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数据手册

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SKM450GB33F 数据手册

SKM450GB33F

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

3300

760

542

450

900

T_c= 25 °C

T_c= 80 °C

T_j= 150 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2xI_Cnom

-20 ... 20

SEMITRANS^®20

V_CC= 2200 V,L_s= 40 nH,R_Gon= 6.8 Ω,

_Goff= 68 Ω, V_GE± 15, T_j= 150 °C,

_CES≤ 3300

Operation

t_psc

T_j

µs

°C

-50 ... 150

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

674

476

450

T_j= 150 °C

SKM450GB33F

Features

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°,

Operation

900

t.b.d.

-50 ... 150

• 3.3 kV F-IGBT

°C

• 450A half bridge

Module

I_t(RMS)

T_stg

• Low V_ce, E_offand R_th

• High power density

• Low inductance module design

• T-sensor

1000

-55 ... 150

6000

°C

V_isol

AC sinus 50 Hz, t = 1 min

• Easy paralleling and easy power

scaling

• For flexible and compact medium

voltage inverters

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 450 A

T_j= 25 °C

V_CE(sat)

1.75

2.43

5.5

2.07

2.86

6.5

2.37

3.26

_GE= 15 V

T_j= 150 °C

chiplevel

V_CE= 10V, I_C= 450 mA, T_j= 25 °C

V_GE(th)

I_CES

7.5

0.3

T_j= 25 °C

V_GE= 0 V

_CE= 3300 V

T_j= 150 °C

V_GE= 0 V, V_CE= 10 V, f = 0.1 MHz,

_vj= 25 °C

C_ies

24.0

V_GE= -15V ... 15V

T_j= 25 °C

V_CC= 1800 V

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

1296

6.2

T_j= 150 °C

326

118

601

1180

291

_C= 450 A

_GE= +15/-15 V

_{G on}= 6.8 Ω

_{G off}= 12 Ω

di/dt_on= 3500 A/µs

di/dt_off= 3400 A/µs

du/dt = 1250 V/µs

L_s= 35 nH

T_j= 150 °C

E_off

601

R_th(j-c)

per IGBT

0.035

K/W

Rev. 2.0 – 02.05.2017

12 3 4 5 6

中文翻译

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